Kobe International Conference Center, Kobe, Japan December 14-16, 2016
CONFERENCE VENUE Kobe Japan
Schedule
Schedule (tentative)
December 14
(Wednesday)
December 15
(Thursday)
December 16
(Friday)
Morning Opening

Plenary Lecture

Invited and Oral Presentations
Plenary Lecture

Invited and Oral Presentations
Plenary Lecture

Invited and Oral Presentations
Afternoon Invited and Oral Presentations Invited and Oral Presentations

Poster Presentations
Invited and Oral Presentations

Award Ceremony

Closing
Evening Poster Presentation Banquet  
Conference Program
Late News
P1-44(LN-1)
Synthesis and Characterization of Li2O DopedV2O5/TiO2Nanocomposites via Solid-State Reaction and their Utilization for Gas Sensing Application
Fozia Z. Haque1, Sachin Phuskele1, Nitu Yana1, Neha Sigh1, Jyoti Bamne2
  • Optical Nanomaterials Lab, Department of Physics, Maulana Azad National Institute of Technology (M.A.N.I.T.), India
  • Department of Physics, Barkatullah University, India
P1-45(LN-7)
Effect of Light Illumination on Solution-Processed Top-Gate Organic Transistor Memory Devices with Soluble Fullerene-Polymer Charge Storage Layers
Fumiya Shiono1, Takashi Nagase1,2, Takashi Kobayashi1,2, Hiroyoshi Naito1,2
  • Department of Physics and Electronics, Osaka Prefecture University, Japan
  • The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University, Japan
P1-46(LN-8)
Three-dimensional chemical distribution of organic and inorganic materials in organic transistors by low energy Cs+ ion sputtering
L. Tortora1, M. Urbini1, P. Branchini1, M. Rapisarda2, L. Mariucci2, S. Calvi2, M. Barra3, A. Cassinese3, F. Chiarella3, R. Giordano4, A. Aloisio4
  • INFN and Department of Mathematics and Physics, Roma Tre University, Italy
  • IMM- CNR, Italy
  • CNR-SPIN and Department of Physics, University of Naples “Federico II”, Italy
  • INFN, and Department of Physics, University of Naples “Federico II”, Italy
P1-47(LN-9)
Control of the singlet-triplet energy gap in a thermally activated delayed fluorescence emitter by the use of a polar host matrix
Shota Haseyama1, Akitsugu Niwa1, Takashi Kobayashi1,2, Takashi Nagase1,2, Kenichi Goushi3,4, Chihaya Adachi3,4, Hiroyoshi Naito1,2
  • Dept. of Phys. & Electron., Osaka Pref. Univ., Japan
  • RIMED, Osaka Pref. Univ., Japan
  • OPERA, Kyushu Univ., Japan
  • JST-ERATO, Adachi Molecular Exciton Engineering Project, Japan
P2-44(LN-2)
Asymmetric modulation of electronic characteristics in the pentacene barristors with graphene electrodes
Wang-Taek Hwang1, Hyunhak Jeong1, Dongku Kim1, Yeonisk Jang1, Jun-Woo Kim1, and Takhee Lee1
  • Department of Physics and Astronomy, Seoul National University, Korea
P2-45(LN-3)
Determination of solar cell parameters of dye-sensitized solar cells using a genetic algorithm
T. Otsura1, S. Tajima1, T. Sugiyama1, T. Nagase1,2, T. Kobayashi1,2, M. Yanagida3, L. Han2,3, H. Naito1,2
  • Department of Physics and Electronics, Osaka Prefecture University, Japan
  • The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Japan
  • National Institute for Materials Science, Japan
P2-46(LN-4)
Withdrawal
P2-47(LN-5)
Solution-Processed Organic Field-Effect Transistors Based on Dinaphthothienothiophene Precursor with Chemically Modified Electrodes
Takashi Nagase1,2, Souichiro Abe1, Takashi Kobayashi1,2, Yu Kimura3, Azusa Hamaguchi3, Yoshinori Ikeda3, Hiroyoshi Naito1,2
  • Department of Physics and Electronics, Osaka Prefecture University, Japan
  • The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University, Japan
  • Electronics Materials Development Project, Teijin Limited, Japan
P2-48(LN-6)
Electrical Performance of Solution-Processed Dioctylbenzothienobenzothiophene-Based Top-Gate Organic Transistors with Molybdenum Trioxide Hole Injection Layers
Takashi Nagase1,2, Fumio Mochizuki1, Yosuke Miyata1, Takashi Kobayashi1,2, Kazuo Takimiya3, Yuichi Sadamitsu4, Masaaki Ikeda4, Hiroyoshi Naito1,2
  • Department of Physics and Electronics, Osaka Prefecture University, Japan
  • The Research Institute for Molecular Electronic Devices (RIMED), Osaka Prefecture University, Japan
  • Center for Emergent Matter Science (CEMS), RIKEN, Japan
  • R&D Planning Division, Nippon Kayaku Co., Ltd., Japan
For Presenter
a) Oral
The standard device for presentation is a LCD projector with your own PC. Conference PCs, in which MS Windows 10, MS Power Point 2003-2016 are installed, are provided. If you want to use the Conference PCs, please bring your data by USB flash drive and transfer to the computer and check your data before starting your session.
The Macintosh user must bring the connector corresponding to MiniD-SUB 15pin
Overhead projectors will not be available.

b) Poster
The size of a panel for a poster is 88 cm wide and 180 cm tall.
Please prepare your poster in size H160cm W86cm because of 20cm of upper side of poster board is used for the poster number notice.
Push pins will be supplied.
Each poster presenter should displays own board (see the presentation No)
Poster presenters should display their posters from 12 noon and peel off by the session end time of each day.